FQB95N03L
Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Key Features
- Fast switching
- rDS(ON) = 0.0064Ω (Typ), V GS = 10V
- rDS(ON) = 0.010Ω (Typ), VGS = 5V
- Qg (Typ) = 24nC, VGS = 5V
- Qgd (Typ) = 8nC
- CISS (Typ) = 2600pF
